| CuO纳米线阵列的制备与特性 |
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| 引用本文： | 于冬亮,葛传楠,都有为.CuO纳米线阵列的制备与特性[J].半导体学报,2009,30(7):072003-4. |
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| 作者姓名： | 于冬亮 葛传楠 都有为 |
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| 作者单位： | National Laboratory of Solid State Microstructures Department of Physics;Nanjing University;Department of Physics;Jiangsu Institute of Education; |
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| 基金项目： | 国家重点基础研究规划项目 |
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| 摘 要： | CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide （AAO） membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 ？C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current–voltage curve of the CuO nanowires is nonlinear.
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| 关 键 词： | 纳米线阵列 纳米氧化铜 制备 阳极氧化铝 透射电子显微镜 表征 氧化铝膜 电化学沉积 |
| 收稿时间： | 1/9/2009 12:00:00 AM |
Preparation and characterization of CuO nanowire arrays |
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| Yu Dongliang,Ge Chuannan and Du Youwei.Preparation and characterization of CuO nanowire arrays[J].Chinese Journal of Semiconductors,2009,30(7):072003-4. |
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| Authors: | Yu Dongliang Ge Chuannan and Du Youwei |
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| Affiliation: | National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China; Department of Physics, Jiangsu Institute of Education, Nanjing 210013, China;National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China; Department of Physics, Jiangsu Institute of Education, Nanjing 210013, China;Department of Physics, Jiangsu Institute of Education, Nanjing 210013, China |
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| Abstract: | nanowires CuO semiconductors current-voltagecharacteristic |
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| Keywords: | nanowires CuO semiconductors current-voltagecharacteristic |
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