|
|||||
|
|
Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation |
|
| Authors: | Das K McClelland S Butcher JB |
| Affiliation: | Middlesex Polytechnic, Microelectronics Centre, London, UK; |
| Abstract: | An improvement of the crystalline quality of the surface layer in buried implanted oxide structures in silicon has been achieved by silicon in implantation and subsequent 570°C anneal treatment. |
| Keywords: | |
