Si基体上双层Ti－O薄膜的XPS和AES分析研究

采用沉积－离子轰击－沉积工艺制备了双层Ｔｉ－Ｏ薄膜，并利用ＸＰＳ和ＡＥＳ对膜层进行了深度分析．结果发现：在氩离子轰击后的薄膜上再沉积同质薄膜，在膜表层一定厚度内可得到具有化学配比的ＴｉＯ２薄膜；氩离子的轰击使钛及碳氧化物内迁入Ｓｉ基体，而Ｓｉ外迁到膜内，并造成多价形式的Ｔｉ氧化物共存，ＴｉＯ２在这些Ｔｉ氧化物中所占的比例随沉积膜深度呈现先逐渐减少而后又逐渐增大的分布规律；此外，氩离子的轰击使得薄膜与基体在界面处形成较宽的、复杂的混合层．混合层主要由ＴｉＯ２、Ｔｉ２Ｏ３、ＴｉＯ、未氧化完全的ＳｉＯ２－ｘ及纯Ｓｉ组成。

XPS and AES investigation of two-layer Ti-O film on silicon substrate

A two-layer Ti-O film prepared by using a technique of d.c.reactive sputter deposition with ion beam bombardment is investigated with XPS and AES.The results show that titanium oxides vary along with the depth of the film.There is a Tio2 layer on the surface of the film after the carbon contamination layer is sputtered away.Titanium and carbon enter the silicon substrate and silicon diffuses into the film during Ar+ bombardment, which causes co-existance of titanium oxides with various stoichiometric composition and the fraction of TiO2 first gradually reduces and then increases along with the film depth.Moreover,the mixed layer at the interface of the substrate and the film consists of TiO2,Ti2O3,TiO,partial oxidized SiO2-x and silicon.