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CMOS and SiGe bipolar circuits for applications up to 110 GHz |
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| Authors: | A L Scholtz Ao Univ-Prof Dipl-Ing Dr techn D Kehrer Dipl-Ing Dr techn M Tiebout Marc Dipl-Ing Dr techn H -D Wohlmuth Hans-Dieter Dipl-Ing Dr techn H Knapp Dipl-Ing Dr techn M Wurzer Dipl-Ing W Perndl Dipl-Ing M Rest C Kienmayer Dipl-Ing R Thüringer Dipl-Ing W Bakalski Dipl-Ing W Simbürger Dipl-Ing Dr techn |
| Affiliation: | 1. Institute for Communications and Radio Frequency Engineering, Vienna University of Technology, Gu?hausstra?e 25/389, A-1040, Wien 2. Vienna University of Technology and Infineon Technologie AG, Austria 3. Infineon Technologies AG, Corporate Research, Otto-Hahn-Ring 6, D-81739, München |
| Abstract: | Recently, CMOS has been demonstrated to be a viable technology for very-high-bit-rate broad-band and wireless communication systems up to 40 Gb/s and 50 GHz. Advances in device scaling and doping-profile optimization have also resulted in SiGe bipolar transistors with impressive performance, including cut-off frequencies of more than 200 GHz. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 µm CMOS technology up to 50 GHz and of a high-performance SiGe bipolar technology up to 110 GHz operating frequency. The combination of advanced circuit techniques and a state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits. |
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