| 台面刻蚀深度对埋栅SITH栅阴击穿的影响 |
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| 引用本文： | 岳红菊,刘肃,王永顺,李海蓉.台面刻蚀深度对埋栅SITH栅阴击穿的影响[J].半导体技术,2009,34(6). |
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| 作者姓名： | 岳红菊 刘肃 王永顺 李海蓉 |
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| 作者单位： | 兰州大学,物理科学与技术学院,微电子与固体电子学研究所,兰州,730000;兰州交通大学,电子与信息工程学院,兰州,730070 |
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| 摘 要： | 针对台面刻蚀深度对埋栅型静电感应晶闸管(SITH)栅阴击穿特性的影响做了实验研究.实验结果表明,随着台面刻蚀深度的增大,器件栅阴击穿由原来的软击穿变为硬击穿,同时击穿电压升高,SITH设计了独立的台面槽,并研究了台面刻蚀深度与栅阴击穿电压和栅阴击穿特性间的关系,指出台面刻蚀深度的增加可以有效减弱表面电荷和表面缺陷对器件的影响,改善栅阴击穿曲线,提高栅阴击穿电压.同时,还简要描述了这种器件的制造工艺.
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| 关 键 词： | 静电感应晶闸管 埋栅结构 台面刻蚀 栅阴击穿 表面缺陷 |
Influence of Mesa Etching Depth on Gate-Cathode Breakdown Characteristics of SITH with Buried Gate Structure |
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| Yue Hongju,Liu Su,Wang Yongshun,Li Hairong.Influence of Mesa Etching Depth on Gate-Cathode Breakdown Characteristics of SITH with Buried Gate Structure[J].Semiconductor Technology,2009,34(6). |
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| Authors: | Yue Hongju Liu Su Wang Yongshun Li Hairong |
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| Affiliation: | 1.Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China;2.College of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China |
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| Abstract: | The impact of mesa etching depth on gate cathode breakdown of buried-gate SITH was studied experimentally.With the increase in mesa etching depth,gate-cathode breakdown voltage rises and breakdown characteristic alters from soft breakdown to hard breakdown gradually.The device was designed to contain a table-board groove,which could reduce the influence of surface charges and defects.Meanwhile,the relationship between mesa etching depth and gate-cathode breakdown voltage and breakdown characteristic was pre... |
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| Keywords: | SITH buried-gate structure mesa etching gate-cathode breakdown surface defect |
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