Effect of Buffer Layer on the Properties of Laser Ablated PZT Thin Films |
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| Authors: | R Reshmi V Natarajan M K Jayaraj |
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| Affiliation: | 1. Optoelectronic Devices Laboratory, Department of Physics , Cochin University of Science and Technology , Kochi, 22, India;2. Naval Physical &3. Oceanographic Laboratory , Thrikkakara, Kochi, 21, India |
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| Abstract: | Lead zirconate titanate (PbZr x Ti1?x O3) or PZT ceramics are a class of piezoelectric materials that are currently experiencing widespread use in industry as electromechanical devices. PtSi/ZnO/PZT thin films were deposited by pulsed laser deposition at relatively low substrate temperature. The PZT thin films on PtSi substrates and on ZnO buffer layer were deposited at substrate temperature 300°C. The composition analysis shows that the film deposited at low temperature is stoichiometric. The films exhibit ferroelectric nature with coercive field of 19.6 kV/cm for 800 nm thick film. The leakage current density of the films shows a good insulating behavior. |
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| Keywords: | PZT laser ablation piezoelectric ferroelectric |
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