Monolayer heterointerfaces and thin layers (~10 ?) in AlxGa1?xAs-GaAs superlattices grown by metalorganic chemical vapour deposition |
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Authors: | Brown JM Holonyak N Ludowise MJ Dietze WT Lewis CR |
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Affiliation: | University of Illinois at Urbana-Champaign, Electrical Engineering Research Laboratory and Materials Research Laboratory, Urbana, USA; |
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Abstract: | Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1?xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ~10 ?. |
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