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Monolayer heterointerfaces and thin layers (~10 ?) in AlxGa1?xAs-GaAs superlattices grown by metalorganic chemical vapour deposition
Authors:Brown  JM Holonyak  N Ludowise  MJ Dietze  WT Lewis  CR
Affiliation:University of Illinois at Urbana-Champaign, Electrical Engineering Research Laboratory and Materials Research Laboratory, Urbana, USA;
Abstract:Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1?xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ~10 ?.
Keywords:
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