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| 采用噪声抵消技术的高增益CMOS宽带LNA设计 | |
| 引用本文： | 董叶梓,张鹏,毛陆虹.采用噪声抵消技术的高增益CMOS宽带LNA设计[J].电子技术应用,2013,39(5). |
| 作者姓名： | 董叶梓 张鹏 毛陆虹 |
| 作者单位： | 1. 国家海洋技术中心,天津300112;天津大学电子信息工程学院,天津300072 2. 国家海洋技术中心,天津,300112 3. 天津大学电子信息工程学院,天津,300072 |
| 摘 要： | 设计了一种面向多频段应用的CMOS宽带低噪声放大器。采用噪声抵消技术以及局部负反馈结构,引入栅极电感补偿高频的增益损失,电路具有高增益、低噪声的特点,并且具有平坦的通带增益。设计采用UMC 0.18μm工艺,后仿真显示:在1.8 V供电电压下,LNA的直流功耗约为9.45 mW,电路的最大增益约为23 dB,3 dB频带范围为0.1 GHz1.35 GHz,3 dB带宽内的噪声约为1.7 dB1.35 GHz,3 dB带宽内的噪声约为1.7 dB5 dB;在1 V供电电压下,电路依然能够保持较高的性能。 |
| 关 键 词： | 宽带低噪声放大器 噪声抵消技术 局部反馈 电感补偿 CMOS集成电路 |
A high gain CMOS wideband LNA with noise cancelling |
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| Dong Yezi , Zhang Peng , Mao Luhong.A high gain CMOS wideband LNA with noise cancelling[J].Application of Electronic Technique,2013,39(5). | |
| Authors: | Dong Yezi Zhang Peng Mao Luhong |
| Abstract: | A CMOS wideband low noise amplifier is presented for multi-standard applications.Noise cancelling and local feedback are used in this design,as well as a gate inductor is used in order to compensate the gain loss at high frequency.These lead to a LNA with high gain and low noise,and achieve a flat gain in pass-band.The design is realized with UMC 0.18 μm process.According to the post simulation result: Consuming 9.45 mW from a 1.8 V supply,the LNA achieves a maximum power gain of 23 dB and a NF of 1.7 dB~5 dB over a 3 dB bandwidth of 0.1 GHz~1.35 GHz;and under a 1 V supply,the circuit can remain a good performance. |
| Keywords: | wideband low noise amplifier noise cancelling local feedback inductor peaking CMOS integrated circuits |
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