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Reliability of RF MEMS switches due to charging effects and their circuital modelling |
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| Authors: | Romolo Marcelli Giancarlo Bartolucci George Papaioannu Giorgio De Angelis Andrea Lucibello Emanuela Proietti Benno Margesin Flavio Giacomozzi François Deborgies |
| Affiliation: | (1) CNR-IMM Roma, Via del Fosso del Cavaliere 100, 00133 Rome, Italy;(2) Electronic Engineering Department, University of Roma, Tor Vergata, Via del Politecnico 1, 00133 Rome, Italy;(3) Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, 15784 Athens, Greece;(4) FBK-irst, Via Sommarive 18, 38050 Povo (TN), Italy;(5) ESA-ESTEC, Noordwijk, The Netherlands |
| Abstract: | The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure. |
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