The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors |
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| Affiliation: | 1. Department of Electrical Engineering and Institute of Electronic Engineering, Tsing-Hua University, Hsinchu 300, Taiwan, Republic of China;2. Department of Materials Engineering, Mingchi University of Technology, Taipei 243, Taiwan, Republic of China;1. Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh, Russia;2. Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg, Russia;1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China;3. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;1. Institute of Chemistry, University of Silesia, 9 Szkolna Str., 40-006 Katowice, Poland;2. Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 M. Curie-Sklodowska Str., 41-819 Zabrze, Poland;1. School of Electronic Science and Engineering, Nanjing University of Posts & Telecommunications, Nanjing 210023, PR China;2. National Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanijng 210093, PR China;3. School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223300, PR China;4. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;1. Henan Province Key Laboratory of Utilization of Non–metallic Mineral in the South of Henan, College of Chemistry and Chemical Engineering, Xinyang Normal University, Xinyang 464000, People’s Republic of China;2. Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074, People’s Republic of China |
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| Abstract: | Metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using PbZr0.53Ti0.47O3 (PZT) as the ferroelectric layer and zirconium oxide (ZrO2) as the insulator layer were fabricated in this work. The leakage current and the C-V memory window were measured for MFIS capacitors with the PZT layer annealed at temperatures of 400 °C, 500 °C, 600 °C, 700 °C. The dominant conduction mechanism of Al/PZT(290 nm)/ZrO2(15 nm)/Si structure is Poole-Frenkel emission in the temperature range of 300-425 K. Under a sweep voltage of 6 V, the largest memory window of 1.31 V was obtained for 500 °C-annealed samples. The memory window as a function of insulator thickness was also discussed. More serious charge injection is observed when the voltage was swept from negative to positive. |
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