| SiGe HBT 60Co γ射线辐照效应及退火特性 |
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| 引用本文： | 牛振红,郭旗,任迪远,刘刚,高嵩.SiGe HBT 60Co γ射线辐照效应及退火特性[J].半导体学报,2006,27(9):1608-1611. |
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| 作者姓名： | 牛振红 郭旗 任迪远 刘刚 高嵩 |
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| 作者单位： | [1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院研究生院,北京100039 |
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| 摘 要： | 研究了国产SiGe异质结双极晶体管(HBT)60Co γ射线100Gy(Si)～10kGy(Si)总剂量辐照后的辐照效应及辐照后的退火特性.测试了辐照及退火后的直流电参数.实验结果显示,辐照后基极电流(Ib)明显增大,而集电极电流(Ic)基本不变,表明Ib的增加是电流增益退化的主要原因.退火结果表现为电流增益(β=Ic/Ib)继续衰降,表明SiGe HBT具有"后损伤"效应.对其机理进行了探讨,结果表明其主要原因是室温退火中界面态继续增长引起的.
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| 关 键 词： | SiGe异质结双极晶体管 电离辐射 退火 后损伤效应 SiGe HBT γ射线 辐照效应 退火特性 Characteristics Annealing Effects Gamma Irradiation Dose 增长 界面态 室温 机理 损伤 结果表现 退化 电流增益 集电极电流 基极电流 显示 |
| 文章编号： | 0253-4177(2006)09-1608-04 |
| 收稿时间： | 2/27/2006 1:37:42 PM |
| 修稿时间： | 2006年2月27日 |
Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT |
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| Niu Zhenhong,Guo Qi,Ren Diyuan,Liu Gang and Gao Song.Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT[J].Chinese Journal of Semiconductors,2006,27(9):1608-1611. |
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| Authors: | Niu Zhenhong Guo Qi Ren Diyuan Liu Gang and Gao Song |
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| Affiliation: | Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011, China;Graduate School of the Chinese Academy of Sciences,Beijing 100039,China;Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011, China;Graduate School of the Chinese Academy of Sciences,Beijing 100039,China;Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011, China;Graduate School of the Chinese Academy of Sciences,Beijing 100039,China |
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| Abstract: | The total-dose radiation effects and annealing characteristics of a SiGe HBT are studied.It is found that the degradation of the current gain is dominated by the increase of Ib.The mechanisms behind the post-damage effects of total-dose radiation are discussed.The chief factor that causes post-damage effects is the increase in the interface states. |
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| Keywords: | SiGe HBT ionizing radiation annealing post-damage effect |
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