| 用时间分辨反射率技术研究硅的固相外延 |
| |
| 引用本文： | 王小兵,朱福英.用时间分辨反射率技术研究硅的固相外延[J].核技术,1994,17(8):471-475. |
| |
| 作者姓名： | 王小兵 朱福英 |
| |
| 作者单位： | 中国科学院上海原子核研究所核分析技术开放实验室上海分部 |
| |
| 摘 要： | 用时间分辨反射率技术实时测量了Ｓｉ＋、Ａｓ＋注入单晶硅的固相外延生长速率和外延层厚度，并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理，分析了实验结果．
|
| 关 键 词： | 离子注入 固相外延 反射率 硅 |
The study of solid phase epitaxy in silicon by the time-resolved reflectivity technique |
| |
| Wang Xiaobing, Zhu Fuying, Pan Haochang, Cao Dexin, Zhu Dezhang.The study of solid phase epitaxy in silicon by the time-resolved reflectivity technique[J].Nuclear Techniques,1994,17(8):471-475. |
| |
| Authors: | Wang Xiaobing Zhu Fuying Pan Haochang Cao Dexin Zhu Dezhang |
| |
| Abstract: | he time-resolved reflectivity(TRR) technique has been used to measure the solid phase epitaxial growth rate and the thickness of epitaxial layer for Si+ and As+implanted single crystalline wafers.The thickness of amorphous layer for the As-implanted samples has been determined by backscattering-channeling analysis to confirm the measured TRR results.The principle of the TRR technique is introduced and the experimental result is discussed. |
| |
| Keywords: | Crystal silicon Ion implantation Solid phase epitaxy Reflectivity |
| 本文献已被 CNKI 维普 等数据库收录！ |
