| 漏及衬底偏压对深亚微米工艺器件总剂量效应的影响 |
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| 引用本文： | 黄辉祥,刘张李,胡志远,张正选,陈明,毕大炜,邹世昌.漏及衬底偏压对深亚微米工艺器件总剂量效应的影响[J].半导体学报,2012,33(4):044008-5. |
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| 作者姓名： | 黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌 |
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| 作者单位： | 中科院上海微系统与信息技术研究所 |
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| 摘 要： | 本文对采用0.18?m工艺制造的NMOS器件辐射总剂量效应进行了研究。对晶体管进行了不同剂量的60Co辐射实验,同时测试了辐照前后晶体管电学参数随漏、衬底偏压的变化的规律。采用STI寄生晶体管模型来解释晶体管的关态漏电流及阈值电压漂移性质。3D器件仿真验证了模型的准确性。
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| 关 键 词： | 衬底偏压 技术设备 深亚微米 阈值电压漂移 寄生晶体管 电离效应 关键参数 电离辐射 |
Influence of drain and substrate bias on the TID effect for deep submicron technology devices |
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| Huang Huixiang,Liu Zhangli,Hu Zhiyuan,Zhang Zhengxuan,Chen Ming,Bi Dawei and Zou Shichang.Influence of drain and substrate bias on the TID effect for deep submicron technology devices[J].Chinese Journal of Semiconductors,2012,33(4):044008-5. |
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| Authors: | Huang Huixiang Liu Zhangli Hu Zhiyuan Zhang Zhengxuan Chen Ming Bi Dawei and Zou Shichang |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | |
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| Keywords: | parasitic transistor swallow trench isolation total ionizing dose off-state leakage |
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