化学机械抛光过程中护环对硅片表面接触压强分布和宏观轮廓的影响

为了获得单晶硅片化学机械抛光过程中护环对接触压强分布的影响规律，根据有护环化学机械抛光实际出发，建立了抛光过程的接触力学模型和边界条件，利用有限元的方法对有护环抛光接触状态接触压强分布进行了计算和分析，并利用抛光实验对计算获得结果进行了验证；获得了硅片与抛光垫间的接触表面压强分布形态，以及护环几何参数对压强分布的影响规律；结果表明护环抛光接触压强的分布也存在不均匀性，而且在硅片外径邻域内接触压强最大，这些也能导致被加工硅片产生平面度误差和塌边，选择合理地护环几何参量和负载比，可以改善接触压强场分布的均匀性。

Analysis of the effect of the retaining ring on the contact pressure distribution and macro-profile of wafer surface in chemical mechanical polishing

Abstract：In order to obtain the effects of retaining ring to the contact pressure distributions in the chemical mechanical polishing（CMP）of silicon wafer , based on the practices of CMP with a retaining ring, the mechanism model and boundary conditions on CMP processes are set up. Then the contact pressure distribution are calculated and analyzed by the use of ANSYS, and are investigated by polishing experiments. At last, the contact pressure distributions between silicon wafer and polishing pad and the effects of the retaining ring on it are obtained, .In conclusion, in CMP, the contact pressure distribution is non-uniform and the pressure in the outside borderline of silicon wafer is the maximal, which generate the flatness errors and the subsiding of the outside edge of wafer. When the geometrical sizes and the load ratio of the retaining ring to silicon wafer are chosen properly, the uniformity of the contact pressure distribution can be improved and the available region flatness of wafer surface will become better.