Stress Concentration in the Vicinity of a Hole Defect Under Conditions of Hertzian Contact |
| |
Authors: | Takashi Yamamoto Masao Eguchi Kosho Murayama |
| |
Affiliation: | NASA—Lewis Research Center , Cleveland, Ohio, 44135 |
| |
Abstract: | Two-dimensional photoelastic stress analyses were conducted for epoxy resin models containing a hole defect under the conditions of Hertzian contact. Stress concentrations around the defect were determined as a function of several parameters. These were hole diameter, its vertical distance from the contact surface, and the horizontal distance from the Hertzian contact area. Also determined was the effect of tangential traction (generated by a friction coefficient of 0.1) on the stress concentration. Sharp stress concentrations occur in the vicinity of both the left and the right side of the hole. The stress concentration becomes more distinct the larger the hole diameter and the smaller the distance between the hole and the contact surface. The stress concentration is greatest when the disk imposing a normal load is located at the contact surface directly over the hole. The magnitude and the location of stress concentration varies with the distance between the Hertzian contact area and the hole. Taking into account the stress amplitude, the area which can be involved in a process of rolling contact fatigue seems to be confined to a shallow region at both sides of the hole. The effect of tangential traction is comparatively small on the stress concentration around tile hole. |
| |
Keywords: | Torque Converters Squeeze-Film Bearings |
|
|