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Co和Cu薄膜电学特性和连续性特征的判据
引用本文:范平,易葵,邵建达,齐红基,范正修.Co和Cu薄膜电学特性和连续性特征的判据[J].中国有色金属学报,2006,16(4):651-656.
作者姓名:范平  易葵  邵建达  齐红基  范正修
作者单位:1. 深圳大学,理学院,深圳,518060
2. 中国科学院,上海光学精密机械研究所,光学薄膜技术研发中心,上海,201800
基金项目:国家高技术研究发展计划(863计划);广东省深圳市科技计划
摘    要:采用离子束溅射沉积了不同厚度的Co膜和Cu膜,利用四电极法测量了薄膜的电阻率,从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明,Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果,不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据,并利用原子力显微镜(AFM)观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。

关 键 词:Co薄膜  Cu薄膜  金属材料  电学特性
文章编号:1004-0609(2006)04-0651-06
收稿时间:2005-08-30
修稿时间:2005-12-12

Electrical properties and characteristic criterion of continuity of Co and Cu thin films
FAN Ping,YI Kui,SHAO Jian-da,QI Hong-ji,FAN Zheng-xiu.Electrical properties and characteristic criterion of continuity of Co and Cu thin films[J].The Chinese Journal of Nonferrous Metals,2006,16(4):651-656.
Authors:FAN Ping  YI Kui  SHAO Jian-da  QI Hong-ji  FAN Zheng-xiu
Affiliation:1. School of Science, Shenzhen University, Shenzhen 518060, China; 2. Research and Development Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Abstract:The Co and Cu films with different thickness were prepared by ion-beam sputtering.The resistivities of films were measured by the four-probe technique.The relationships between electric conductivity and thickness of Co and Cu films are gotten.The results show that the electrical properties of Co and Cu films have obvious size effect.The comparison of the theoretical results of the model proposed by Fan with the experimental results indicates that the calculated results by theory agree well with the experimental results.The characteristic thickness was proposed to use as the characteristic criterion of the growth of metal films from discontinuous to continuous.The morphologies of surfaces of Co and Cu films near characteristic thickness were studied by atomic force microscopy(AFM).
Keywords:Co thin film  Cu thin film  metallic material  electrical properties
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