| 双向可控硅器件在片上静电防护中的应用 |
| |
| 引用本文： | 李亮,朱科翰.双向可控硅器件在片上静电防护中的应用[J].半导体技术,2009,34(12). |
| |
| 作者姓名： | 李亮 朱科翰 |
| |
| 作者单位： | 1. 苏州市职业大学,电子系,江苏,苏州,215104
2. 昆泰集成电路,上海,有限公司,上海,201203 |
| |
| 摘 要： | 设计了一种用于芯片静电放电(ESD)防护的双向可控硅(DDSCR)器件.该器件具有对称性或非对称性骤回I-V特性,可以用于多种应用场合.器件的最优静电防护性能达到94 V/μm.简洁的器件结构用于输入/输出保护,对内部电路的寄生效应小,人体模型ESD测试达到耐压等级3(超过4 kV).在多电源芯片的静电防护中,双向可控硅器件可克服普通器件不能胜任的多模式静电事件的发生.首次提出了双向可控硅器件在高速多媒体接口中静电防护和反向驱动保护的应用.
|
| 关 键 词： | 双向可控硅 静电放电 骤回 人体模型 反向驱动保护 |
Application of Dual-Direction Si Controlled Rectifier Device for on-Chip ESD Protection |
| |
| Li Liang,Zhu Kehan.Application of Dual-Direction Si Controlled Rectifier Device for on-Chip ESD Protection[J].Semiconductor Technology,2009,34(12). |
| |
| Authors: | Li Liang Zhu Kehan |
| |
| Abstract: | A dual-direction Si controlled rectifier (DDSCR) device for on-chip electrostatic discharge (ESD) protection was designed. The proposed DDSCR device which features the symmetrical or asymmetrical snapback I-V characteristics can be implemented for varies applications. Its best ESD performance reaches 94 V/μm. Compact device for I/O with low parasitic to internal circuits and human body model (HBM) ESD level 3 (more than 4 kV) is achieved. DDSCR can be dedicated to overcome all modes of the ESD events in the multiple separated power pins which other ESD protection devices are not competent. DDSCR as on-chip ESD protection solution for backdrive protection in high-speed multimedia interface is proposed for the first time. |
| |
| Keywords: | DDSCR ESD snapback HBM backdrive protection |
| 本文献已被 万方数据 等数据库收录！ |
|
