| Abstract: | In this paper,we report the experimental results of an optically controlled planar GaAs PIN diode. Using the processes of V shallow groove and ion implantation,we have developed the GaAs PIN diode. The diode has breakdown voltage of up to 80 V and capacitance as low as 0. 2 PF. The optical effect on the I-Vcurve of the diode is very similar to that of a transistor,and the optically controlledcurrent efficiency is 300μA/mW. This kind of PIN diode was incorporated in phaseshifters,the optically controlled phase shift performance was measured to be 20°-26°at L frequency band. |
