Three-dimensional simulation of sacrificial etching |
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Authors: | Johann Cervenka Hajdin Ceric Siegfried Selberherr |
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Affiliation: | 1. Institute for Microelectronics, Technische Universit?t Wien, Gusshausstrasse 27–29/E360, 1040, Vienna, Austria
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Abstract: | Sacrificial etching is one of the most important process steps in micro-electro-mechanical systems technology, since it enables
the generation of free-standing structures. These structures are often the main part of micro-mechanical devices, intended
to sense or induce a mechanical movement. The etching process transforms an initial multi-segmented geometry and depends on
material properties and several process conditions. One of the crucial issues for etching is the etching selectivity on different
materials. The major task for the simulation is to give an answer, how sacrificial layer surfaces regress in time under the
influence of process parameters and to which magnitude surrounding material segments are affected by the etching process.
For this purpose we have developed a fully three-dimensional topography simulation tool, Etcher-Topo3D, which is capable to
deal with realistic process conditions. The main concept is demonstrated in this work. During simulation the topography of
the initial multi-segment geometry is changed which is handled by a level-set algorithm. After a simulation is finished, the
level-set representation has usually to be converted back to a mesh representation to enable further analysis. To illustrate
the main features of our simulation tool several examples of MEMS structures with a sacrificial layer are presented. |
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