电子束沉积技术生长WZO-TCO薄膜及其特性研究

采用电子束沉积技术生长w掺ZnO（WZO，ZnO：w）透明导电氧化物（TCO）薄膜（即WZO-TCO薄膜）并研究了衬底温度（100-350℃）对薄膜微观结构、表面形貌以及光电性能的影响。实验表明，随着衬底温度的升高，薄膜的晶体质量取得明显改善（从非晶化状态转变到结晶状态），生长的WZO薄膜呈现C轴择优取向即（002）...

Research on WZO-TCO thin films grown via reactive electron beam vapor deposition

Highly conducting and transparent tungsten-doped ZnO thin films grown at different substrate temperatures were obtained via reactive electron beam vapor deposition,and the micro-structural,optical and electrical properties of these WZO thin films were investigated.The experimental results indicate that the micro-structural properties of WZO thin films are improved with increasing the substrate temperature from 100 ℃ to 350 ℃.The WZO thin films deposited from 200 ℃ to 350 ℃ exhibit the hexagonal wurtzite structure and a preferred c-axis(002) crystal orientation perpendicular to the substrates.The Hall mobilities of these deposited thin films increase monotonously from 0.1 cm2·V-1s-1 to 15.4 cm2·V-1·s-1 with the increasing of substrate temperatures from 100 ℃ to 350 ℃.The lowest resistivity of WZO thin film,2.6×10-3 Ωcm,is obtained at 200 ℃.Among these WZO thin films,the optimum electrical and optical properties are successfully received at 350 ℃ with a high Hall mobility of 15.4 cm2·V-1·s-1,a carrier concentration of 1.2×1020 cm-3,and the average transmittance of 82.27% in the visible and near infrared regions(including 2 mm glass substrate).