| 采用低温缓冲层技术在Si衬底上生长高质量Ge薄膜 |
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| 引用本文： | 周志文,贺敬凯,李成,余金中.采用低温缓冲层技术在Si衬底上生长高质量Ge薄膜[J].光电子．激光,2011(7):1030-1033. |
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| 作者姓名： | 周志文 贺敬凯 李成 余金中 |
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| 作者单位： | 深圳信息职业技术学院电子通信技术系；;深圳信息职业技术学院电子通信技术系；;厦门大学物理系；;中国科学院半导体研究所集成光电子学国家重点实验室； |
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| 基金项目： | 国家重点基础发展研究计划资助项目(2007CB613404) |
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| 摘 要： | 采用低温缓冲层技术,在Si衬底上生长了质量优良的Ge薄膜。利用原子力显微镜（AFM）、双晶X射线衍射（XRD）和拉曼散射等研究了薄膜的晶体质量。结果表明,由于无法抑制三维岛状生长,低温Ge缓冲层的表面是起伏的。然而,Ge与Si间的压应变几乎完全弛豫。当缓冲层足够厚时,后续高温Ge外延层的生长能够使粗糙的表面变得平整。在...
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| 关 键 词： | Ge薄膜 低温缓冲层技术 表面形貌 超高真空化学气相沉积(UHV-CVD) |
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique |
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| ZHOU Zhi-wen,HE Jing-kai,LI Cheng and YU Jin-zhong.Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique[J].Journal of Optoelectronics·laser,2011(7):1030-1033. |
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| Authors: | ZHOU Zhi-wen HE Jing-kai LI Cheng and YU Jin-zhong |
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| Affiliation: | Department of Electronic Communication Technology,Shenzhen Institute of Information Technology,Shenzhen 518029,China;;Department of Electronic Communication Technology,Shenzhen Institute of Information Technology,Shenzhen 518029,China;;Department of Physics,Xiamen University,Xiamen 361005,China;;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope,X-ray diffraction,and Raman spectroscopy.The results show that the LT Ge buffer is rough due to the three-dimensional islands formations,but the misfit stress is nearly fully relaxed.Fortunately,the rough LT Ge surface is effectively smoothed by subsequent growth at elevated ... |
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| Keywords: | Ge epitaxial films low-temperature buffer technique surface morphology ultrahigh vacuum chemical vapor deposition(UHV-CVD) |
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