Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well |
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| Authors: | M Ono S Matsuzaka Y Ohno H Ohno |
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| Affiliation: | (1) Center for Interdisciplinary Magnetic Resonance, National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Dr, Tallahassee, FL 32310, USA;(2) London Center for Nanotechnology and Department of Physics and Astronomy, University College London, London, WC1H 0AH, UK;(3) Department of Physics and Center for Terahertz Science and Technology, University of California, Santa Barbara, CA 93106, USA;(4) Department of Physics, University of Utah, Salt Lake City, UT, 84112, USA;(5) Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294-1170, USA |
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| Abstract: | Gate-voltage dependences of nuclear spin relaxation and decoherence times in a Schottky-gated n-GaAs/AlGaAs (110) quantum
well (QW) are investigated by time-resolved Kerr-rotation measurements combined with pulsed-rf nuclear magnetic resonance
(NMR). We show that the nuclear spin relaxation and decoherence times decrease with decreasing electron density, indicating
that the hyperfine interaction is enhanced as the electronic states becomes localized in an impurity-doped QW. |
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