丝网印刷碳纳米管阴极场发射点开启场强的分布统计

由于碳纳米管阴极场发射点数量巨大，分布无规律，无法单独测量各个场发射点的开启阈值，所以一直没有效的实验方法获得碳纳米管阴极中场发射点开启阈值的分布规律。本文采用丝网印刷碳纳米管点阵作为阴极，通过不同电压下该阴极场发射发光亮点的统计，间接地获得了丝网印刷碳纳米管阴极中场发射点开启阈值的分布规律。在此基础上，通过过压老炼的方法，有效地压缩了碳纳米管阴极场发射开启阈值的分布，显著提高了碳纳米管阴极场发射的均匀性。

Turn-on Voltage Distribution Measurement of Field Emission Sites in CNT Film

Because of the great number of emission sites in a CNT film and its irregular distribution,it's hard to measure the threshold voltage of individual emission sites one by one.We reported a convenient method for turn-on voltage distribution measurement with illuminating image.With this method,in which the statistics of field emission lighting spots under differing voltages is carried out,the rules of the turn-on voltage distribution is obtained indirectly.It's revealed that the threshold voltage distribution is significantly depressed and the emission uniformity is considerably improved after over-high voltage ageing.