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Local Structure and Valence State of Mn in Ga1−x Mn x N Epilayers |
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| Authors: | X Biquard O Proux J Cibert D Ferrand H Mariette R Giraud B Barbara |
| Affiliation: | 1. DRFMC-SP2M, CEA Grenoble, 17, av. des Martyrs, 38054, Grenoble cedex 9, France 2. Laboratoire de Cristallographie, 25 avenue des Martyrs, BP 166, 38042, Grenoble cedex 9, France 3. CEA-CNRS-UJF Grenoble Group “Nanophysique et Semi-conducteurs,” Laboratoire de Spectrométrie Physique, BP 87, F-38402, Saint-Martin d'Héres, France 4. Laboratoire de Magnétisme Louis Néel, BP 166, F-38042, Grenoble cedex 9, France |
| Abstract: | Mn has been incorporated in epilayers of the large-gap semiconductor GaN grown by molecular beam epitaxy using a nitrogen plasma cell. Detailed extended X-ray absorption fine structure (EXAFS) studies of a Ga0.98Mn0.02N epilayer confirm that the Mn atoms substitute the Ga atoms, with an increase by 2.7% of the distance to the nearest nitrogen atoms. Near-edge spectroscopy results tend to indicate that the valence state of Mn is slightly higher than 3+, while EXAFS analysis suggests an electron transfer to the N neighbors. |
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