应用于TD-SCDMA移动终端的单片InGaP/GaAs HBT功率放大器

报道了用于TD-SCDMA移动终端的高效率、高线性度HBT功率放大器的研制.该单片功率放大器采用两级放大结构,内部集成了输入匹配、级问匹配网络以及有源偏置电路,总芯片面积仅为0.91mmX 0.98mm.该功率放大器采用单电源3.4V供电,在高、低功率模式下,PAE分别为43%和116%,增益达到了28.5以及24dB.当输入QPSK调制信号时,在低输出功率以及高输出功率状态下,1.6MHz/3.2MHz中心频偏处,ACPR分别低于-45dBc/-56dBc和-39dBc/-50dBc.本芯片尺寸小,电压稳定性高,性能优越,为低成本化的大规模生产提供了能性.

A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application

This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellular phones that achieves high efficiency and iinearity. The two-stage MMIC integrates the input matching circuits,interstage matching circuits,and active bias circuits in a single chip with size as small as 0.91ram×0.98mm. The amplifier obtains a power-added efficiency of 43% (15%) and a gain of 28.5dB (24dB) at the high and low operation mode under the 3.4V supply. In addition, the adjacent channel leakage power is below-45dBc/-56dBc and-39dBc/-50dBc at 1.6MHz/3.2MHz offset in low and high power output modes,respectively,with QPSK modulation. The MM1C offers the potential for low cost production due to small chip size,stable voltage supply,and high performance at the same time.