| 用深能级瞬态电容谱测定掺磷-Si:H的隙态密度 |
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| 引用本文： | 杜永昌,张玉峰,杨大同,张光华,韩汝琦.用深能级瞬态电容谱测定掺磷-Si:H的隙态密度[J].电子与信息学报,1984,6(5):417-421. |
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| 作者姓名： | 杜永昌 张玉峰 杨大同 张光华 韩汝琦 |
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| 作者单位： | 北京大学物理系
(杜永昌，张玉峰)，北京大学无线电系
(杨大同，张光华)，北京大学计算机系(韩汝琦) |
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| 摘 要： | 正 非晶硅的隙态密度在很大程度上决定了材料的电学和光学性质,因而对非晶硅隙态密度的研究具有重要的理论和实际意义。目前,对非晶硅隙态密度分布的认识,仍存在着争议。W.E.Spear.等人首先用场效应方法测定了非晶硅的隙态密度分布,并在相当一段时间为人们所接受。但由于场效应方法在实验数据处理上存在着很大误差。另外该方法的测量结果受界面态的影响很大。J.D.Cohen等人用深能级瞬态谱(DLTS)测
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| 收稿时间： | 1983-05-05 |
THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY |
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| Du Yongchang,Zhang Yufeng,Yang Datong,Zhang Guanghua,Han Ruqi.THE DISTRIBUTION OF DENSITY OF GAP STATES FOR PHOSPHORUS-DOPED AMORPHOUS SILICON MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY[J].Journal of Electronics & Information Technology,1984,6(5):417-421. |
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| Authors: | Du Yongchang Zhang Yufeng Yang Datong Zhang Guanghua Han Ruqi |
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| Affiliation: | Beijing University |
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| Abstract: | A density-of-state distribution in the pseudo-gap of phosphorus-doped a-Si:H material prepared by GD method has been measured experimentally by deep level tran-sient spectroscopy (DLTS). A minimum value of 7×1015cm-3 eV-1 has been obtained at the energy of about 0.45 eV below Ec. This physical picture is quite different from the previous one obtained by the field effect method. Some comments on the method used and the theoretical analysis are given. |
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