| Si5P6O25∶Tb3+的结构与荧光性质 |
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| 引用本文： | 王喜贵,吴红英,杨展澜,翁诗甫,吴瑾光.Si5P6O25∶Tb3+的结构与荧光性质[J].无机化学学报,2003,19(2):219-224. |
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| 作者姓名： | 王喜贵 吴红英 杨展澜 翁诗甫 吴瑾光 |
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| 作者单位： | 1. 内蒙古师范大学化学系,呼和浩特,010022
2. 北京大学化学与分子工程学院,稀土材料化学及应用国家重点实验室,北京,100871 |
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| 基金项目： | 国家重点基础研究发展规划资助项目(No:G1998061311),国家自然科学基金资助项目(No:20161001,No.200235),内蒙古自治区自然科学基金资助项目(No:20010901-14),内蒙古师范大学和北京大学合作项目. |
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| 摘 要： | Tb3+ ions were incorporated in P-Si matrix material through a sol-gel process. Luminescence properties of Tb3+ as a function of dopant， firing temperature， composition and structure of matrices were investigated. The gels synthesized by the reaction of P2O5 or H3PO4 with tetraethoxy silane and TbCl3 as dopant were fired in air from the temperature 25～1000℃ to form P-Si crystalline phase. The crystal structure was determined by powder X-ray diffraction. Si5O(PO4)6 were the only crystalline phase and belong to hexagonal crystal system. The emission of 5D4-7F5(～545nm) transition of Tb3+ in the P-Si system is composed of two peaks. The amount of doping Tb3+ varied from 0.664% to 1.644%， and no obvious concentration quenching was observed in this doping concentra-tion range. The intensity of Tb3+ emission increased with firing temperature increasing and becomes stable at 800～1000℃.
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| 关 键 词： | P-Si体系 发光性质 Tb3+ |
| 修稿时间： | 2002年9月18日 |
Structure and Luminescence Properties of Si5P6O25: Tb3+ System |
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| WANG Xi-Gui,WU Hong-Ying,YANG Zhan-Lan,WENG Shi-Fu and WU Jin-Guang.Structure and Luminescence Properties of Si5P6O25: Tb3+ System[J].Chinese Journal of Inorganic Chemistry,2003,19(2):219-224. |
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| Authors: | WANG Xi-Gui WU Hong-Ying YANG Zhan-Lan WENG Shi-Fu and WU Jin-Guang |
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| Abstract: | |
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| Keywords: | P-Si system luminescence properties Tb3+ ion |
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