二硫化钼-硅异质结太阳电池的原位制备及器件模拟

 二维材料与晶体硅形成的异质结太阳电池是当前太阳电池研究热点之一,大多数研究都集中在石墨烯和硅形成的肖特基结太阳电池。为改善器件的能带结构,本研究采用具有一定禁带宽度的n-MoS₂二维半导体材料与p-Si 形成异质结太阳电池。通过实验研究了退火时间对MoS₂材料合成的影响,并对MoS₂-Si异质结的暗电流和光电流曲线进行测量和分析。通过异质结模拟软件wx-AMPS对MoS₂-Si异质结结构进行效率计算和能带分析,探讨了薄膜厚度和载流子浓度对器件开路电压的影响。

In-situ fabrication and device simulation of molybdenum disulfidesilicon heterojunction solar cell

Heterojunction solar cells formed by two-dimensional materials and crystalline silicon are one of the research highlights in the field of solar cells. Most researches focus on the graphene-silicon Schottky junction solar cells. To refine the band-gap structure of these devices, we have fabricated the two-dimensional semiconductor material of n-MoS₂, which has a band-gap, on the surface of p-Si to form heterojunction solar cells. Our experiment has revealed the effect of annealing time on the synthesis of MoS₂. Dark and light current-voltage curves of MoS₂-Si heterojunction are measured and discussed. The heterostructure simulation software wx-AMPS is applied for the efficiency calculation and the energy band analysis. The effects of MoS₂ thin film thickness and carrier concentration on the open-circuit voltage are studied.