A technique to improve the drive current of high-voltage I/O transistors in digital CMOS technologies |
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Authors: | Haifeng Xu O KK |
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Affiliation: | Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA; |
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Abstract: | By combining a 0.12-/spl mu/m-long 1.2-V thin-oxide transistor with a 0.22-/spl mu/m-long 3.3-V thick-oxide transistor in a 0.13-/spl mu/m CMOS process, a composite MOS transistor structure with a drawn gate length of 0.34 /spl mu/m is realized. Measurements show that at V/sub GS/=1.2 V and V/sub DS/=3.3 V, the composite transistor has more than two times the drain current of the minimum channel length (0.34 /spl mu/m) 3.3-V thick-oxide transistor, while having the same breakdown voltage (V/sub BK/) as the thick-oxide transistor. Exploiting these, it should be possible to implement 3.3-V I/O transistors with better combination of drive current, threshold voltage (V/sub T/) and breakdown voltage in conventional CMOS technologies without adding any process modifications. |
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