Low-operation voltage of InGaN/GaN light-emitting diodes by using aMg-doped Al0.15Ga0.85N/GaN superlattice |
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Authors: | Sheu JK Chi GC Jou MJ |
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Affiliation: | Opt. Sci. Centre, Nat. Central Univ., Chung-Li ; |
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Abstract: | Low-resistivity Mg-doped Al0.15Ga0.85N/GaN strained-layer superlattices were grown. In these superlattices, the maximum hole concentration is 3×1018/cm3 at room temperature. Hall-effect measurements indicate high conductivity of this structure in which the high activation efficiency is attributed to the strain-induced piezoelectric fields. This work also fabricated InGaN/GaN blue LEDs that consist of a Mg-doped Al0.15Ga0.85N/GaN SLs. Experimental results indicate that the LEDs can achieve a lower operation voltage of around 3 V, i.e., smaller than conventional devices which have an operation voltage of about 3.8 V |
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