首页 | 官方网站   微博 | 高级检索  
     


Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator MOSFETs
Authors:Gopal Rawat  Sanjay Kumar  Ekta Goel  Mirgender Kumar  Sarvesh Dubey and S Jit
Affiliation:Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India;Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India;Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India;Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India;Faculty of Electronics and Communication Engineering, Shri Ramswaroop Memorial University, Lucknow-Deva Road, India;Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India
Abstract:strained-Si-on-insulator (SSOI) Poisson's solution short-channel-effects
Keywords:strained-Si-on-insulator (SSOI)  Poisson's solution  short-channel-effects
本文献已被 维普 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号