Photoluminescence in silicon implanted with erbium ions at an elevated temperature |
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| Authors: | N A Sobolev A E Kalyadin E I Shek V I Sakharov I T Serenkov V I Vdovin E O Parshin M I Makoviichuk |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.Fock Research Institute of Physics,St. Petersburg University,St. Petersburg,Russia;3.Yaroslavl Branch, Institute of Physics and Technology,Russian Academy of Sciences,Yaroslavl,Russia |
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| Abstract: | Photoluminescence spectra of n-type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at
1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra
at 80 K are dominated by lines of the Er3+ ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed
at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium
and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate. |
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