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中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀
引用本文:许生,侯晓波,范垂祯,赵来,周海军,吴克坚,高文波,颜远全,查良镇.中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀[J].真空,2002(5):15-18.
作者姓名:许生  侯晓波  范垂祯  赵来  周海军  吴克坚  高文波  颜远全  查良镇
作者单位:1. 深圳豪威光电子股份有限公司,广东,深圳,518057
2. 清华大学电子工程系,北京,100084
3. 深圳豪威光电子股份有限公司,广东,深圳,518057;深圳市真空技术工程研究开发中心,广东,深圳,518057
摘    要:多数ITO透明导电玻璃生产线在实现SiO2膜与ITO膜在线联镀时,应用SiO2靶射频溅射沉积SiO2膜工艺和ITO靶直流溅射沉积ITO膜工艺,如果SiO2膜应用硅靶反应磁控溅射工艺,存在这种工艺是否可以与ITO靶直流溅射沉积ITO膜工艺在线联用以及如何实现联用的问题。作者对现有的生产线进行了改造设计、加工,做了大量实验、质谱分析和多项测试研究,成功地实现反应溅射SiO2膜与ITO膜在线联镀,做到SiO2镀膜室的工作状态的变化基本上不影响ITO镀膜室的工艺条件。

关 键 词:中频反应溅射  SiO2膜  直流溅射  ITO膜  在线联镀  二氧化硅  透明导电玻璃  镀膜工艺
文章编号:1002-0322(2002)05-0015-04
修稿时间:2002年9月20日

On-line continuous deposition of SiO2 by medium frequency reactive sputtering and ITO by direct current sputtering
XU Sheng ,HOU Xiao bo ,FAN Chui zhen ,ZHAO Lai ,ZHOU Hai jun ,WU Ke jian ,GAO Wen bo ,YAN Yuan quan ,CHA Liang zhen.On-line continuous deposition of SiO2 by medium frequency reactive sputtering and ITO by direct current sputtering[J].Vacuum,2002(5):15-18.
Authors:XU Sheng  HOU Xiao bo  FAN Chui zhen    ZHAO Lai  ZHOU Hai jun  WU Ke jian    GAO Wen bo    YAN Yuan quan    CHA Liang zhen
Affiliation:XU Sheng 1,HOU Xiao bo 2,FAN Chui zhen 1,3,ZHAO Lai 2,ZHOU Hai jun 1,WU Ke jian 1,3,GAO Wen bo 1,3,YAN Yuan quan 1,3,CHA Liang zhen 2
Abstract:It's popular to deposit SiO 2 film by radio frequency(RF) sputtering and ITO film by direct current(DC) sputtering for continuous deposition in a ITO production line. However, it will affect the technology of the deposition of ITO in sequence to deposit the SiO 2 film by reactive sputtering. The disturbance is studied by experiments of a mass of spectrum measurements and so on, and the line is reconsidered and modified. The continuous deposition of SiO 2 by medium frequency(MF) reactive sputtering and ITO by DC sputtering is realized without disturbance of the chamber of SiO 2 reactive deposition to ITO technology.
Keywords:reactive sputtering  SiO  2  ITO  on  line continuous deposition
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