应力诱导碳纳米管电阻的变化

利用三点弯曲法研究了掺杂和末掺杂碳纳米管薄膜应力诱导电阻的变化。该研究中所用的碳纳米管是用热灯丝化学汽相沉积法合成的。实验结果表明 ,碳纳米管有显著的应力诱导电阻变化的效应。当应力从 0 .2GPa增加到 1GPa时 ,膜的电阻相对变化从 7%增加到 11% ,而非掺杂的薄膜电阻变化小于掺杂膜的情况。电阻随应力变化的原因也许是带隙变化 (掺杂 )和管之间接触电阻变化 (非掺杂 )所致

Stress-induced resistance changes in carbon nanotubes

In this paper, the stress induced resistance changes in iodine doped and undoped carbon nanotube films were investigated by a three point bending test. Carbon nanotubes in this study were synthesized by hot filament chemical vapor deposition. The experimental results have shown that there is a striking stress induced resistance change in carbon nanotube films. The relative changes in resistance of doped carbon nanotube films were increased from 7% to 11% when stress increased from 0.2GPa to 1GPa, while the resistance changes with stress in undoped carbon nanotube films were less than that of doped films. The origin of the stress induced resistance in the films may be caused by stress induced change in the bandgap for the doped tubes and intertube contact resistance for the undoped tubes.