Analysis of ISE in dynamic hardness measurements of β-Sn single crystals using a depth-sensing indentation technique |
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Authors: | O ahin O Uzun U Klemen N Uar |
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Affiliation: | aDepartment of Physics, Art and Science Faculty, Süleyman Demirel University, Isparta, Turkey bDepartment of Physics, Art and Science Faculty, Gaziosmanpa?a University, Tokat, Turkey |
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Abstract: | The dynamic indentation tests on (001) plane β-Sn single crystals having different growth directions under different peak indentation test load (10, 20, 30, 40, and 50 mN) has been investigated. The experimental results reveal that the measured hardness values exhibit a peak-load dependence, i.e., indentation size effect (ISE). Such peak-load dependence is then analyzed using the Meyer's law, the Hays–Kendall's approach, the Elastic/Plastic Deformation model, the Proportional Specimen Resistance (PSR) model, and the Modified PSR (MPSR) model. As a result, Modified PSR model is found to be the most effective for dynamic hardness determination of β-Sn single crystals. |
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Keywords: | Dynamic hardness Depth-sensing indentation technique Indentation size effect (ISE) β-Sn single crystal |
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