Effect of Gd3+ doping on structural,optical and magnetic properties of SnO crystals |
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| Affiliation: | 1. Faculty of Science, Energy and Environment, King Mongkut''s University of Technology North Bangkok, Rayong Campus, Rayong, 21120, Thailand;2. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand;3. Department of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Nakhon Ratchasima, 30000, Thailand;4. School of Ceramic Engineering, Institute of Engineering, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand;5. Synchrotron Light Research Institute, Nakhon Ratchasima, 30000, Thailand;6. School of Energy Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Rayong, 21210, Thailand;7. Department of Electrical and Computer Engineering, College of Engineering, The University of Texas at San Antonio, San Antonio, TX, 78249, USA;8. Research Center in Physics and Astronomy, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand;1. Innovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, 621900, China;2. Department of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen, 518026, China;1. Laboratory for Theoretical Physics and Condensed Matter Physics, Vinča Institute of Nuclear Sciences, University of Belgrade, Belgrade, Serbia;2. Laboratory of Physics, Vinča Institute of Nuclear Sciences, University of Belgrade, Belgrade, Serbia;3. Advanced Material Department, Jožef Stefan Institute, Jamova 39, Ljubljana, Slovenia;1. School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, PR China;2. Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan, Hunan, 411105, PR China;3. Hunan Provincial Key Laboratory of Thin Film Materials and Devices, Xiangtan, Hunan, 411105, PR China;1. College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha, 410014, China;2. Chengnan Academy, Hunan First Normal University, Changsha, 410205, China |
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| Abstract: | Layered dilute magnetic semiconductors are expected as promising candidates for next-generation electric devices, however, the low saturation magnetization limits their applications. Doping of semiconductors can effectively tune the magnetic and optical properties, which further influence on spintronic and optoelectronic applications. The discovery of layered materials opens a new door for spintronic application due to their unique properties. Here, the layered Gd3+ doped SnO crystals are synthesized via a simple hydrothermal method, with morphologies ranging from square shapes to four-pointed star shapes. We investigated the UV–vis absorption spectra, photoluminescence spectra and magnetic characteristics of the samples. The as-obtained Gd3+ doped SnO crystals show robust ferromagnetism at room temperature. From the first-principles calculations results, the substitution Gd dopants and the O vacancies work together to introduce the ferromagnetism. Our results demonstrate the Gd3+ doping tunability of SnO, a ferromagnetic layered material, as a functional material for spintronics and optoelectronics. |
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| Keywords: | Layered materials Ferromagnetism First principles calculations |
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