印制电路板化学金漏镀浅析简

在化学镍金过程中会出现漏镀现象，文章讨论了漏镀产生的机理，采用正交实验法对影响漏镀的主要因素进行排列，同时，对于铜面与钯离子在进行置换反应时的电化学势能进行分析。结果表明，在调节活化钯相关参数的同时，反应中的电化学势能亦不容忽视。

Analysis of plating leakage in PCB ENIG process

In the chemical nickel plating process, there is leakage phenomenon. This article discusses the generation mechanism of leakage plated using orthogonal experimental method for plating of the main factors affecting leakage arranged, while the copper surface and the palladium ion exchange reaction tirne during electrochemical potential were analysis. The results show that the paralneters in regulating the activation of palladium, while the reaction in the electrochemical potential should not be overlooked.