Ultra high temperature rapid thermal annealing of GaN

All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on Al₂O₃ substrates. Annealing was performed at 1100–1500°C, using AlN encapsulation. Activation percentages of ≥90% were obtained for Si⁺ implantation annealed at 1400°C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450°C.