Structural and frequency dependencies of a.c. and dielectric characterizations of epitaxial InSb-based heterojunctions |
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| Authors: | A ASHERY A H ZAKI M HUSSIEN MOURAD A M AZAB A A M FARAG |
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| Affiliation: | 1.Solid State Physics Department, Physics Division,National Research Center,Giza,Egypt;2.Electronics Department,Military Technical College,Cairo,Egypt;3.Department of Engineering Applications of Laser (E.A.L), National Institute of Laser Enhanced Sciences (N.I.L.E.S),Cairo University,Giza,Egypt;4.Solid State Electronics Laboratory, Solid State Physics Department, Physics Division,National Research Center,Giza,Egypt;5.Department of Physics, Faculty of Science and Arts,Aljouf University,Aljouf,Saudi Arabia;6.Thin Film Laboratory, Department of Physics, Faculty of Education,Ain Shams University,Cairo,Egypt |
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| Abstract: | In this work, heterojunction of InSb/InP was grown by liquid phase epitaxy (LPE). Surface morphology and crystalline structure of the heterojunction were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The frequency and temperature dependences of a.c. conductivity and dielectric properties of the heterojunctions were investigated in the ranges of 100 kHz–5 MHz and 298–628 K, respectively. The a.c. conductivity and its frequency exponents were interpreted in terms of correlated barrier hopping model (CBH), as the dominant conduction mechanism for charge carrier transport. The calculated activation energy, from the Arrhenius plot, was found to decrease with increasing frequency. Experimental results of both dielectric constant ε 1 and dielectric loss ε 2 showed a remarkable dependence of both frequency and temperature. |
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