Tilted superlattice composition profile determined by photoluminescence and thermal disordering |
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| Authors: | F G Johnson B L Olmsted Samuel Chen G W Wicks |
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| Affiliation: | (1) The Institute of Optics, University of Rochester, 14627 Rochester, NY;(2) Corporate Research Laboratories, Eastman Kodak Co., 14650 Rochester, NY |
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| Abstract: | The composition profile of an (AlAs)1/2(GaAs)1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the
energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift
in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is
used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile
that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal,
varying from Al0.40Ga0.60As to Al0.60Ga0.40As. |
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| Keywords: | Molecular beam epitaxy and tilted superlattice |
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