等离激元增强金硅肖特基结近红外光电探测器进展

表面等离激元共振衰减诱导热电子，因其能量高、分布窄、打破半导体禁带宽度限制等特点被广泛应用于拓展半导体光电转换的响应光谱，如拓展宽禁带半导体的响应光谱至可见光波段，拓展硅的响应波段至近红外。此外，还可以通过调节表面等离激元结构调控响应光谱和实现偏振探测，在实现硅基近红外光电探测领域具有重要的应用价值。从表面等离激元以及表面等离激元内光电效应的机理出发，综述了表面等离激元热电子原理在实现硅基近红外光电探测方面的研究进展，并总结了表面等离激元结构的形貌，尺寸、分布等因素对热电子的产生（外量子效率）和注入效率（内量子效率）的影响。最后展望了基于表面等离激元结构的硅基肖特基结近红外光电探测的研究方向。

Progress of surface plasmon enhanced near-infrared photodetector based on metal/Si Schottky heterojunction

Due to the high energy, narrow distribution and breaking the bandgap limitation, plasmon induced hot electrons has been widely applied to extend the photoresponse spectra of the semiconductor, such as realizing the response spectrum of wideband semiconductor and silicon to visible and near-infrared range, respectively. Besides, the response spectrum can be adjusted by changing the plasmonic nanostructures, which has an important advantage for realizing silicon-based near-infrared photodectection.Firstly, the concept and mechanism of surface plasmon and plasmon enhanced internal photoemission were introduced. Then, the recent progress on near infrared hot electron photodetector based on silicon was summarized. The influence of the shape, size, distribution of plasmonic nanostructure on the generation and transportation of hot electrons were also summarized. Finally the challenges and potential future directions of surface plasmon enhanced near-infrared photodetector based on metal/Si Schottky heterojunction were discussed.