双波长可调外腔半导体激光器

提出了一种基于体布拉格光栅（VBG）和横向啁啾体布拉格光栅（TCVBG）组合的双光栅外腔半导体激光器，该外腔半导体激光器采用反射率15%的体光栅和反射率17%的啁啾体布拉格光栅作为反馈元件和模式选择元件，实现特定波长的选择和调谐，实验研究了外腔激光器的功率-电流特性、光谱特性和波长调谐特性。实验结果表明:双光栅外腔半导体激光器最大输出功率为1.96 W，斜率效率为0.94 W/A，外腔效率达到78%。输出光谱为双波长，一个波长为808.6 nm，另一个波长连续可调，通过改变横向啁啾体光栅的位置，该波长可从800 nm调谐至815 nm，可调范围达15 nm，在整个可调范围内两个波长的谱线宽度（FWHM）均小于0.3 nm。

Tunable dual-wavelength external cavity semiconductor laser

A double grating external cavity semiconductor laser based on a volume Bragg grating (VBG) and a transversely chirped volume Bragg grating (TCVBG) were reported. The external cavity semiconductor laser consisted of a VBG with the reflectivity of 15% and a TCVBG with the reflectivity of 17%, which function as feedback element and mode selection element to achieve specific wavelength selection and wavelength tuning. The power, spectral and wavelength tuning characteristics of external cavity laser semiconductor using VBG and TCVBG were demonstrated. The experimental results indicate that an output power of 1.96 W is obtained with the slop efficiency of 0.94 W/A, which corresponds to the efficiency of 78% compared to the output power in free-running LD. A dual-wavelength was achieved with the linewidth down to 0.3 nm, and one wavelength of 808.6 nm was stabilized, and by adjusting the position of the chirped volume Bragg grating in the transverse direction, another wavelength was tuned in a 15 nm wavelength tunable range from 800 nm to 815 nm.