0.2THz宽带非平衡式倍频电路研究

基于四阳极结反向串联型GaAs平面肖特基二极管，设计并实现了0.2 THz宽带非平衡式二次倍频电路。肖特基二极管倒装焊接在75 m石英电路上。在小功率和大功率注入条件下，测试了倍频电路的输出功率和倍频效率。输入功率在10~15 mW时，通过加载正向偏置电压，在210~224 GHz，倍频效率大于3%，在212 GHz处有最高点倍频效率为7.8%。输入功率在48~88 mW时，在自偏压条件下，210~224 GHz带内倍频效率大于3.6%，在214 GHz处测得最大倍频效率为5.7%。固定输出频率为212 GHz，在132 mW功率注入时，自偏压输出功率最大为5.7 mW，加载反向偏置电压为-0.8 V时，输出功率为7.5 mW。

Research of 0.2 THz broadband unbalanced multiplier circuit

An 0.2 THz brodband unbalanced doubler multiplier was designed and realized based on four anodes in anti-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 75 m thick quartz. The circuit output power and efficiency was measured under the condition of small and large input power. The measured efficiency was bigger than 3% over the band of 210 GHz to 224 GHz with the input power between 10 mW to 15 mW under the condition of forward bias voltage. The peak efficiency is 7.8% at the frequency of 212 GHz. The measured efficiency was bigger than 3.6% over the band of 210 GHz to 224 GHz with the input power between 48 mW to 88 mW under the condition of self-biased. The peak efficiency is 5.7% at the frequency of 214 GHz. The biggest output power is 5.7 mW and 7.5 mW at the fixed frequency of 212 GHz when the input power is 132 mW under the condition of self-biased and reverse bias voltage of -0.8 V separately.