| 应用正电子湮没技术研究衬底温度对a—Si：H薄膜结构的影响 |
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| 引用本文： | 滕敏康,王志超.应用正电子湮没技术研究衬底温度对a—Si：H薄膜结构的影响[J].南京大学学报(自然科学版),1991,27(2):243-250. |
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| 作者姓名： | 滕敏康 王志超 |
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| 作者单位： | 南京大学物理系，南京大学物理系 |
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| 摘 要： |
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| 关 键 词： | 正电子湮没 PCVD a－Si－H 薄膜 |
STUDY OF THE INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURE OF a-Si:H FILM BY POSITRON ANNIHILATION TECHNIQUE |
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| Teng Minkang Wang Zhichao.STUDY OF THE INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURE OF a-Si:H FILM BY POSITRON ANNIHILATION TECHNIQUE[J].Journal of Nanjing University: Nat Sci Ed,1991,27(2):243-250. |
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| Authors: | Teng Minkang Wang Zhichao |
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| Affiliation: | Department of Physics |
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| Abstract: | The influence of substrate temperature on structural properties of a-Si:H film deposited by PCVD was studied by positron annihilation technique. The microlite model was used to explain the influence. |
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| Keywords: | structure of a-Si:H film |
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