Simplified model for the domain dynamics in Gunn-effect semiconductors covered with dielectric sheets |
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Authors: | Englemann R |
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Affiliation: | AEG-Telefunken, Forschungsinstitut, Ulm, West Germany; |
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Abstract: | A simplified model is proposed which describes the effect of the stray fields in dielectric surface layers on the dynamical behaviour of domains in thin Gunn-effect semiconductors. The stray fields cause an increase in domain capacitance and hence a decrease in build-up time which leads to larger n0L products for stable operation. |
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