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Transmission electron microscopy of annealed a-Si1−xCx:H/Al films with different Al grain sizes |
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| Authors: | Bian Bo Yie Jian Cao Yi Wu Zi-Qin |
| Affiliation: | Fundamental Physics Center, University of Science and technology of China, Hefei, Anhui 230026, People's Republic of China Physics Department, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China Fundamental Physics Center, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China |
| Abstract: | The crystallization behavior of a-Si1−xCx:H/Al films after annealing has been investigated by transmission electron microscopy and Raman scattering. It is found that the crystallization process is complex and non-uniform, and that both equiaxial and branching Si grains with many twins and stacking faults arise at annealing temperatures as low as 250 °C. Both fine polycrystalline β-SiC grains and fractal-like  -SiC aggregates are first observed in a few regions in a-Si1−xCx:H/Al films annealed at 350 °C. The increase of the Al grain size can cause a decrease in the crystallization temperature and a rise in the grain growth rate of Si. At higher annealing temperatures, the reaction process SiC+Al→Al4C3+Si is predominant. |
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