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SCTS:: scanning capacitance transient spectroscopy
Affiliation:1. Research Institute for Technical Physics and Materials Science (MTA-MFA), 1121 Budapest, Konkoly-Thegeút 29-33, Hungary;2. CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy;1. Institute of Physics, Polish Acad. of Sciences, Al. Lotników 32/46, 02–668 Warsaw, Poland;2. Cardinal S. Wyszyński University, ul. Dewajtis 5, 01–815 Warsaw, Poland;1. College of Chemical Engineering, Xinjiang University, Urumqi 830046, PR China;2. QianJiang College, HangZhou Normal University, HangZhou 310018, PR China;3. Northwest Oilfield Company Engineering Technology Research Institute, SINOPEC, Urumqi, 830013, PR China;4. Key Laboratory of Cleaner Transition of Coal & Chemicals Engineering of Xinjiang Uyghur Autonomous Region, Urumqi 830046, PR China;1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland;2. Veterinary Research Centre, Faculty of Veterinary Medicine, Warsaw University of Life Sciences – SGGW, Nowoursynowska 100, 02-797 Warsaw, Poland;3. Department of Large Animal Diseases with Clinic, Faculty of Veterinary Medicine, Warsaw University of Life Sciences – SGGW, Nowoursynowska 100, 02-797 Warsaw, Poland;4. Department of Physiological Sciences, Faculty of Veterinary Medicine, Warsaw University of Life Sciences – SGGW, Nowoursynowska 159, 02-776 Warsaw, Poland;5. Institute of Chemical and Environment Engineering, West Pomeranian University of Technology, Szczecin, Pułaskiego 10, 70-322 Szczecin, Poland
Abstract:A new working mode of scanning capacitance microscopy (SCM) is presented, extending the possibilities of the measurement from lock-in amplitude mapping to recording of capacitance transients arising as response of abrupt bias changes. Effect of Au doping in Si on SCM and scanning capacitance transient spectroscopy (SCTS) was observed. The decay time of capacitance transient, measured locally on slightly doped region shows good agreement with the conventional DLTS results.
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