Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface |
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| Affiliation: | 1. Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan;2. Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-Ku, Tokyo 153-8505, Japan;3. Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan;1. University of Paris, LTIE-GTE EA 4415, 50, rue de Sèvres, F-92410 Ville d''Avray, France;2. Polytechnic Institute of Coimbra, ISEC, DEM, Rua Pedro Nunes, Quinta da Nora, 3030-199 Coimbra, Portugal;3. University of the Basque Country, ENEDI Research Group, Plaza Europa 1, E-20018 San Sebastián, Spain;4. University of Bath, Department of Architecture and Civil Engineering, Claverton Down, Bath BA2 7AY, UK;1. University of Dayton Research Institute and The Air Force Research Laboratory Wright-Patterson Air Force Base, OH 45433, USA;2. Mechanical Engineering Department, Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, College Park, MD 20742, USA;1. Department of Electrical Engineering, Motilal Nehru National Institute of Technology (MNNIT), Allahabad, India;2. Department of Electrical and Electronics Engineering, University of Johannesburg, Auckland Park, Johannesburg, South Africa;3. Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, College Park, MD, USA;4. Technology Development Group, Power Grid Corporation of India Limited, Gurgaon, Haryana, India;1. M/A-COM Technology Solutions, Lowell, MA, USA;2. University of Parma, Parma, Italy |
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| Abstract: | Hydrogen migration in a SiO2/Si system is examined in detail by nuclear reaction analysis. Electrical reliability measurements reveal a correlation between hydrogen migration from the cathode interface to the SiO2/Si interface and dynamic degradation of the gate dielectric. In addition, the defect levels generated in the bulk of SiO2 have an energy distribution corresponding to that of oxygen vacancies, as revealed by comparing the measured and simulated stress-induced leakage current. Finally, a model of hydrogen-induced gate dielectric degradation is proposed based on first-principles calculations. |
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