Creation and motion of dislocations and fracture in metal and silicon crystals |
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Authors: | Masao Doyama |
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Affiliation: | (1) Teikyo University of Science and Technology, 409-0193 Uenohara, Yamanashi, Japan |
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Abstract: | By making a step on one surface (
) of a rectangular small paralellepiped copper crystal, dislocations could be created by the molecular dynamic method. The
dislocation created was not a complete edge dislocation but a pair of Heidenreich-Shockley partial dislocations. Each time
a dislocation was created, the stress on the surface was released. Small copper crystals having a notch were pulled (until
fracture), compressed and buckled by use of the molecular dynamic method. An embedded atom potential was used to represent
the interaction between atoms. Dislocations were created near the tip of the notch. A very sharp yield stress was observed.
The results of high speed deformations of pure silicon small crystals using the molecular dynamics are presented. The results
suggest that plastic deformation may be possible for the silicon with a high speed deformation even at room temperature. Another
small size single crystal, the same size and the same surfaces, was compressed using molecular dynamic method. The surfaces
are {110}, {112} and {111}. The compressed direction was 111]. It was found that silicon crystals are possible to be compressed
with a high speed deformation. This may suggest that silicon may be plastically deformed with high speed deformation. |
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Keywords: | Simulation creation of dislocations tensile deformation copper single crystals silicon single crystals |
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