| InP基应变补偿多量子阱的研究进展 |
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| 引用本文： | 殷景志,王新强,杜国同,杨树人.InP基应变补偿多量子阱的研究进展[J].半导体光电,2000,21(2):85-87. |
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| 作者姓名： | 殷景志 王新强 杜国同 杨树人 |
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| 作者单位： | 吉林大学电子工程系,长春,130023 |
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| 摘 要： | 介绍了InP基应变补偿MQW的研究进展 ,对应变补偿和非应变补偿MQW的特性做了对比。讨论了InP基应变补偿MQW存在的问题及如何优化InP基应变补偿MQW的生长条件。
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| 关 键 词： | 应变补偿 磷化铟 量子阱 |
Recent Progress in Research on Strain-compensated MQW on InP Substrates |
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| YIN Jing-zhi,WANG Xin-qiang,DU Guo-tong,YANG Shu-ren.Recent Progress in Research on Strain-compensated MQW on InP Substrates[J].Semiconductor Optoelectronics,2000,21(2):85-87. |
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| Authors: | YIN Jing-zhi WANG Xin-qiang DU Guo-tong YANG Shu-ren |
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| Abstract: | It is shown that strain compensation can effectively increase the critical layer thickness or the number of periods in the multiple quantum well (MQW)structure .Compared with a strain-uncompensated MQW on InP subtrates ,strain-compensated MQW exhibits superior in structure and optical properties. Influence of the growth conditions is studied as well. |
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| Keywords: | InP substrate strain-compensation MQW |
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